2SC4960 GP BJT
Datasheet: View
Stock
- 2358 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 900 | V |
| Maximum Collector Emitter Saturation Voltage | 1.5@0.04A@0.2A | V |
| Maximum Collector Emitter Voltage | 800 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 3000 | mW |
| Maximum Transition Frequency | 4(Typ) | MHz |
| Type | NPN |