2SC4982 GP BJT

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  • 1100 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 10A 3-Pin(3+Tab) ITO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.3@0.25A@5A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 25000 mW
Maximum Transition Frequency 50(Typ) MHz
Type NPN