2SC5002 GP BJT

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  • 1044 NEW JERSEY SEMICONDUCTOR
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Trans GP BJT NPN 800V 7A 3-Pin(3+Tab) TO-3PF

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 1500 V
Maximum Collector Emitter Saturation Voltage 5@1.2A@5A V
Maximum Collector Emitter Voltage 800 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 80000 mW
Maximum Transition Frequency 4(Typ) MHz
Type NPN