2SC5129 GP BJT

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  • 1378 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 600V 10A 3-Pin(3+Tab) TO-3P(HIS)

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 1500 V
Maximum Collector Emitter Saturation Voltage 3@1.5A@6A V
Maximum Collector Emitter Voltage 600 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 50000 mW
Maximum Transition Frequency 1.7(Typ) MHz
Type NPN