2SC5199 GP BJT

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  • 2322 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 160V 12A 3-Pin(3+Tab) TO-3PL

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 160 V
Maximum Collector Emitter Saturation Voltage 2.5@0.8A@8A V
Maximum Collector Emitter Voltage 160 V
Maximum DC Collector Current 12 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 120000 mW
Maximum Transition Frequency 30(Typ) MHz
Type NPN