2SC5199 GP BJT
Datasheet: View
Stock
- 2322 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 160 | V |
| Maximum Collector Emitter Saturation Voltage | 2.5@0.8A@8A | V |
| Maximum Collector Emitter Voltage | 160 | V |
| Maximum DC Collector Current | 12 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 120000 | mW |
| Maximum Transition Frequency | 30(Typ) | MHz |
| Type | NPN |