2SC5382 GP BJT
Datasheet: View
Stock
- 2415 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 1200 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.6A@3A | V |
| Maximum Collector Emitter Voltage | 550 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 9 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Type | NPN |