2SC5463 RF BJT

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  • 5847 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 12V 0.06A 3-Pin USM

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Features Values Unit
Configuration Single
Material Si
Maximum Collector Base Voltage 20 V
Maximum Collector Emitter Voltage 12 V
Maximum DC Collector Current 0.06 A
Maximum Emitter Base Voltage 3 V
Maximum Operating Temperature 125 °C
Maximum Transition Frequency 7000(Typ) MHz
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Type NPN