2SC5694 GP BJT

default part image

Datasheet: View

Stock

  • 1487 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 50V 7A 3-Pin TO-126ML

Request For Quote
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.26@125mA@2.5A V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1500 mW
Maximum Transition Frequency 330(Typ) MHz
Type NPN