2SC5855 GP BJT

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  • 2658 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 700V 10A 3-Pin(3+Tab) TO-3P(HIS)

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 1500 V
Maximum Collector Emitter Saturation Voltage 3@2A@8A V
Maximum Collector Emitter Voltage 700 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 50000 mW
Maximum Transition Frequency 2(Typ) MHz
Type NPN