2SC5890 RF BJT
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- 7514 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 20 | V |
| Maximum Collector Emitter Voltage | 12 | V |
| Maximum DC Collector Current | 0.075 | A |
| Maximum Emitter Base Voltage | 1.5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Transition Frequency | 7800(Typ) | MHz |
| Minimum DC Current Gain | 100@20mA@5V | |
| Number of Elements per Chip | 1 | |
| Type | NPN |