2SC829 GP BJT

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  • 377 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 20V 0.03A 3-Pin TO-92-B1

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Voltage 20 V
Maximum DC Collector Current 0.03 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 400 mW
Maximum Transition Frequency 230(Typ) MHz
Type NPN