2SD1020 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 25V 0.7A 3-Pin

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Saturation Voltage 0.4@70mA@700mA V
Maximum Collector Emitter Voltage 25 V
Maximum DC Collector Current 0.7 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 350 mW
Maximum Transition Frequency 170(Typ) MHz
Type NPN