2SD1138 GP BJT
Datasheet: View
Stock
- 21 HITACHI
- 1289 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 150V 2A 3-Pin(3+Tab) TO-220AB
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 200 | V |
| Maximum Collector Emitter Saturation Voltage | 3@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 150 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1800 | mW |
| Type | NPN |