2SD1194 Darlington BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR

Trans Darlington NPN 100V 3A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Configuration Single
Maximum Base Emitter Saturation Voltage 2@3mA@1.5A V
Maximum Collector Base Voltage 110 V
Maximum Collector Emitter Voltage 100 V
Maximum Continuous DC Collector Current 3 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Minimum DC Current Gain 1500@1.5A@3V
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Type NPN
Typical Current Gain Bandwidth 20 MHz