2SD1207 GP BJT

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  • 421 NEW JERSEY SEMICONDUCTOR
  • 325 SANKEN
  • 14 TOSHIBA

Trans GP BJT NPN 50V 2A 3-Pin Case MP

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.4@50mA@1A V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 150(Typ) MHz
Type NPN