2SD1264 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 150V 3A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 200 V
Maximum Collector Emitter Saturation Voltage 1@50mA@500mA V
Maximum Collector Emitter Voltage 150 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 2000 mW
Maximum Transition Frequency 20(Typ) MHz
Type NPN