2SD1266 GP BJT

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  • 99 MATASHITA
  • 1000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 1.2@0.375A@3A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 2000 mW
Maximum Transition Frequency 30(Typ) MHz
Type NPN