2SD1302 GP BJT
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- 5900 MATASHITA
- 1000 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 20V 0.5A 3-Pin TO-92-B1
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 25 | V |
| Maximum Collector Emitter Saturation Voltage | 0.4@20mA@0.5A | V |
| Maximum Collector Emitter Voltage | 20 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 12 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 600 | mW |
| Maximum Transition Frequency | 200(Typ) | MHz |
| Type | NPN |