2SD1818 GP BJT

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  • 1000 NEW JERSEY SEMICONDUCTOR
  • 40 NIPPON SEMI

Trans GP BJT NPN 60V 3A 3-Pin TO-126

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.25@0.15A@1.5A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1300 mW
Type NPN