2SD613 GP BJT

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  • 1743 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 85V 6A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 2@0.4A@4A V
Maximum Collector Emitter Voltage 85 V
Maximum DC Collector Current 6 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 40000 mW
Maximum Transition Frequency 15(Typ) MHz
Type NPN