2SD717 GP BJT

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  • 1615 NEW JERSEY SEMICONDUCTOR
  • 76 TOSHIBA

Trans GP BJT NPN 50V 10A 3-Pin(3+Tab) 2-16B1A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 70 V
Maximum Collector Emitter Saturation Voltage 0.4@0.3A@6A V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 80000 mW
Maximum Transition Frequency 10(Typ) MHz
Type NPN