2SD768 Darlington BJT
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- 5 HITACHI
- 1546 NEW JERSEY SEMICONDUCTOR
Trans Darlington NPN 120V 10A 3-Pin(3+Tab) TO-220AB
Request For Quote| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2@6mA@3A | 3.5@60mA@6A |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum Continuous DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 1000@3A@3V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |