2SD794 GP BJT

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  • 1726 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 45V 3A 3-Pin TO-126

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 70 V
Maximum Collector Emitter Saturation Voltage 2@0.15A@1.5A V
Maximum Collector Emitter Voltage 45 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 60(Typ) MHz
Type NPN