2SD834 Darlington BJT
Datasheet: View
Stock
- 53 FUJI
- 1478 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2@2mA@2A | V |
| Maximum Collector Base Voltage | 250 | V |
| Maximum Collector Emitter Voltage | 200 | V |
| Maximum Continuous DC Collector Current | 4 | A |
| Maximum Emitter Base Voltage | 10 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 1500@2A@2V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |