2SD835 Darlington BJT
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Stock
- 1526 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2@10mA@4A | V |
| Maximum Collector Emitter Voltage | 400 | V |
| Maximum Continuous DC Collector Current | 6 | A |
| Minimum DC Current Gain | 400@4A@1.5V | |
| Number of Elements per Chip | 1 | |
| Type | NPN |