2SD882 GP BJT

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  • 1879 NEW JERSEY SEMICONDUCTOR
  • 629 NIPPON SEMI

Trans GP BJT NPN 30V 3A 3-Pin(3+Tab) SOT-32 Tube

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.4@50mA@1A 0.7@100mA@2A
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 12500 mW
Maximum Transition Frequency 100(Typ) MHz
Type NPN