2SD968 GP BJT

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  • 100 NEW JERSEY SEMICONDUCTOR
  • 5 SANYO

Trans GP BJT NPN 100V 0.5A 4-Pin(3+Tab) Mini Power

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Features Values Unit
Category Bipolar Power
Configuration Single Dual Collector
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.6@50mA@500mA V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 120(Typ) MHz
Type NPN