30KPA110C TVS
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- 632 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Direction Type | Uni-Directional | |
| Maximum Clamping Voltage | 291 | V |
| Maximum Peak Pulse Current | 104 | A |
| Maximum Reverse Leakage Current | 10 | uA |
| Maximum Reverse Stand-off Voltage | 180 | V |
| Minimum Breakdown Voltage | 200 | V |
| Number of Elements per Chip | 1 | |
| Peak Pulse Power Dissipation | 30000 | W |
| Test Current | 5 | mA |