3N129 MOSFET
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- 210 NEW JERSEY SEMICONDUCTOR
- 13 TELEDYNE
| Features | Values | Unit |
|---|---|---|
| Channel Mode | Depletion | |
| Channel Type | N | |
| Configuration | Single | |
| Material | Si | |
| Maximum Continuous Drain Current | 0.05 | A |
| Maximum Drain Source Voltage | 20 | V |
| Maximum Gate Source Voltage | ±10 | V |
| Number of Elements per Chip | 1 |