3N163 MOSFET
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- 775 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Small Signal | |
| Channel Mode | Enhancement | |
| Channel Type | P | |
| Configuration | Single | |
| Maximum Continuous Drain Current | 0.05 | A |
| Maximum Drain Source Voltage | 40 | V |
| Maximum Power Dissipation | 375 | mW |
| Number of Elements per Chip | 1 |