3N77 GP BJT

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  • 103 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 0.02A

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum DC Collector Current 0.02 A
Maximum Emitter Base Voltage 18 V
Maximum Power Dissipation 300 mW
Type NPN