40311 GP BJT

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  • 14 NEW JERSEY SEMICONDUCTOR
  • 6 RCA
  • 75 SOLID STATE DEVICES

Trans GP BJT NPN 30V 0.7A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 0.7 A
Maximum Emitter Base Voltage 2.5 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 5000 mW
Type NPN