40313 GP BJT

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  • 867 NEW JERSEY SEMICONDUCTOR
  • 33 RCA

Trans GP BJT NPN 2A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 2.5 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 35000 mW
Type NPN