40314 GP BJT

default part image

Datasheet: View

Stock

  • 240 NEW JERSEY SEMICONDUCTOR
  • 54 RCA
  • 10 SOLID STATE SYSTEMS
  • 2 SOLID STATE TRANSISTOR

Trans GP BJT NPN 40V 0.7A

Request For Quote
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1.4@15mA@150mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.7 A
Maximum Emitter Base Voltage 2.5 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 5000 mW
Maximum Transition Frequency 100(Typ) MHz
Type NPN