40316 GP BJT

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  • 599 NEW JERSEY SEMICONDUCTOR
  • 2 RCA
  • 1 SOLID SATE

Trans GP BJT NPN 4A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 29000 mW
Type NPN