40319 GP BJT
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- 156 NEW JERSEY SEMICONDUCTOR
- 74 RCA
- 8 SEMICOA
- 15 SOLID STATE DEVICES
Trans GP BJT NPN 40V 0.7A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1.4@15mA@150mA | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 0.7 | A |
| Maximum Emitter Base Voltage | 2.5 | V |
| Maximum Operating Temperature | 200 | ﾡC |
| Maximum Power Dissipation | 5000 | mW |
| Maximum Transition Frequency | 100(Typ) | MHz |
| Type | NPN |