40321 GP BJT

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  • 19 NEW JERSEY SEMICONDUCTOR
  • 427 RCA

Trans GP BJT NPN 1A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 5000 mW
Type NPN