40324 GP BJT

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  • 636 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 35V 4A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Voltage 35 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 2.5 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 29000 mW
Type NPN