40325 GP BJT

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  • 742 NEW JERSEY SEMICONDUCTOR
  • 40 SOLID STATE DEVICES

Trans GP BJT NPN 35V 15A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 36 V
Maximum Collector Emitter Voltage 35 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 117000 mW
Type NPN