40361 GP BJT

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  • 43 NEW JERSEY SEMICONDUCTOR
  • 56 SOLID STATE TRANSISTOR

Trans GP BJT PNP 0.7A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum DC Collector Current 0.7 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 5000 mW
Type PNP