40363 GP BJT

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  • 2356 NEW JERSEY SEMICONDUCTOR
  • 14 RCA
  • 89 SOLID STATE DEVICES

Trans GP BJT PNP 15A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1.1@400mA@4A V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 115000 mW
Maximum Transition Frequency 700(Typ) MHz
Type PNP