40385 GP BJT

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  • 7 HARRIS
  • 76 NEW JERSEY SEMICONDUCTOR
  • 3 RCA

Trans GP BJT NPN 350V 1A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 450 V
Maximum Collector Emitter Saturation Voltage 0.5@4mA@50mA V
Maximum Collector Emitter Voltage 350 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 1000 mW
Type NPN