40408 GP BJT

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  • 9 GENERAL ELECTRIC
  • 39 HARRIS
  • 417 NEW JERSEY SEMICONDUCTOR
  • 66 RCA

Trans GP BJT NPN 90V 0.7A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1.4@15mA@150mA V
Maximum Collector Emitter Voltage 90 V
Maximum DC Collector Current 0.7 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 1000 mW
Type NPN