40829 GP BJT

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  • 754 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 85V 8A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 90 V
Maximum Collector Emitter Saturation Voltage 1@0.2A@2A V
Maximum Collector Emitter Voltage 85 V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 5800 mW
Type PNP