40851 GP BJT

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  • 15 NEW JERSEY SEMICONDUCTOR
  • 8 RCA

Trans GP BJT NPN 350V 7A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 450 V
Maximum Collector Emitter Saturation Voltage 3@0.8A@4A V
Maximum Collector Emitter Voltage 350 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 9 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 45000 mW
Type NPN