BC107B GP BJT

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  • 19 NATIONAL SEMICONDUCTOR
  • 11236 NEW JERSEY SEMICONDUCTOR
  • 6 PHILIPS
  • 23 SIEMENS

Trans GP BJT NPN 45V 0.1A 3-Pin TO-18 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Emitter Voltage 45 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 300 mW
Maximum Transition Frequency 200(Typ) MHz
Type NPN