BC108B GP BJT
Datasheet: View
Stock
- 17387 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Saturation Voltage | 0.25@0.5mA@10mA|0.6@5mA@100mA | V |
| Maximum Collector Emitter Voltage | 20 | V |
| Maximum DC Collector Current | 0.1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 300 | mW |
| Maximum Transition Frequency | 200(Typ) | MHz |
| Type | NPN |