BC140 GP BJT

default part image

Datasheet: View

Stock

  • 12350 NEW JERSEY SEMICONDUCTOR
  • 150 SGS
  • 25 SIEMENS
  • 8 SOLID STATE TRANSISTOR

Trans GP BJT NPN 40V 1A 3-Pin TO-39

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.6@25mA@0.5A V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 175 °C
Maximum Power Dissipation 3700 mW
Maximum Transition Frequency 50(Min) MHz
Type NPN