BC141-16 GP BJT

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  • 11801 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 1A 3-Pin TO-39 Box

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 1@100mA@1A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 800 mW
Maximum Transition Frequency 50(Min) MHz
Type NPN