BC141-6 GP BJT
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- 11653 NEW JERSEY SEMICONDUCTOR
- 233 SIEMENS
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@25mA@0.5A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 3700 | mW |
| Maximum Transition Frequency | 50(Min) | MHz |
| Type | NPN |